[14p-2T-1~14] 17.1 成長技術

▲ [14p-2T-11] In-situ oxygen evolution from substrate holder for large graphene crystal growth in an
atmospheric pressure CVD.

〇(D)Kamal Sharma¹, Golap Kalita¹, Masaki Tanemura¹ (1.Nagoya Inst of Techn)

キーワード：Graphene,Chemical vapor deposition,Ceramic holder

Oxygen of Cu-surface plays a significant role to control the graphene nucleation density for synthesis of large crystals. In this prospect, we demonstrate the in-situ oxygen evolution from ceramic substrate holder and thereby oxidizing the Cu surface for large graphene crystal growth in an atmospheric pressure (AP) chemical vapor deposition (CVD). Polished Cu foils were mounted on a ceramic holder and put inside the quartz tube, subsequently furnace temperature was increased to 1050⁰C in Ar atmosphere. The Cu foil reacts with the surface oxygen of ceramic holder to create a oxidize surface as revealed by X-ray photoelectron (XPS) analysis. Graphene crystals with the size more than 500 μm were obtained on the oxidized Cu surface using polystyrene as solid precursor (Fig. 1). It is observed that the in-situ oxidation process of Cu surface significantly reduces nucleation density and enabling larger graphene crystal growth.
This finding shows a controllable in-situ oxidation process of Cu surface and its effect on graphene
nucleation and growth to achieve large crystal growth.