The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.1 Growth technology

[14p-2T-1~14] 17.1 Growth technology

Mon. Sep 14, 2015 1:45 PM - 5:30 PM 2T (232)

座長:藤井 健志(富士電機),前橋 兼三(農工大)

4:45 PM - 5:00 PM

[14p-2T-12] In-situ observation of effect of substrate heating on CVD growth of graphene

〇Tomoo Terasawa1,2, Tadanobu Taira2, Koichiro Saiki2 (1.Univ. of Tsukuba, 2.Univ. of Tokyo)

Keywords:graphene,CVD,in-situ observation

The growth of graphene by chemical vapor deposition on a Cu substrate has been researched to prepare the large-area and high-quality monolayer graphene. The heating of the substrate before growth was known to change the surface conditions to affect the graphene growth. Here, by using in-situ radiation mode optical microscopy, we report the effect of heating time on the CVD growth of graphene during the repeated growth, shrinkage, and heating procedure. On the polycrystalline Cu substrate, four-fold and six-fold graphene grains were grown. The nucleation density of the former grains decreased faster than that of the latter grains during the heating for 12 hours.