[14p-2T-15~20] 17.2 Structure control and process

[14p-2T-18] Fabrication and characterization of graphene lateral superlattices on SiC facets (1)

〇Satoru Tanaka¹, Kohei Fukuma¹, Shingo Hayashi¹, Takashi Kajiwara¹, Anton Visikovskiy¹, Takushi Iimori², Koichiro Ienaga², Koichiro Yaji², Kan Nakatsuji², Fumio Komori², Hirokazu Tanaka³, Akinobu Kanda³, Nguyen Thanh Cuong⁴, Susumu Okada³ (1.Kyushu Univ., 2.Univ. Tokyo, 3.Univ. Tsukuba, 4.NIMS)

Keywords:Graphene nanostructure,super lattice,Ballistic transport

Well ordered graphene lateral superlattices (LSLs) are found to be self-assembled on SiC(1-108) facets via surface decomposition of vicinal SiC(0001). SiC(1-108) facets consist of highly ordered pairs of a (0001) terrace and a (1-102) nanofacet with ~2.3 nm periodicity, on which monolayer graphene is corrugated. Combination of such morphological corrugation and one-dimensional potential modulation through the periodic SiC facet/terrace surface induces modification of electronic states in the monolayer graphene at K-points. In transport measurement, the graphene LSLs exhibit semiconducting behavior with a band gap of ~0.1 eV, which agrees with the result of DFT calculations. In the presentation, we discuss the details of our results (STM, ARPES, LEED, transport, etc.) as well as the future prospect of our novel approach to graphene band-gap engineering.