[14p-2W-1~10] 15.3 III-V-group epitaxial crystals

[14p-2W-2] Fabrication of highly symmetric QD LED on GaAs (111)A

〇Takaaki Mano¹, Takashi Kuroda¹, Neul Ha¹, Takeshi Noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (1.NIMS)

Keywords:quantum dot,molecular beam epitaxy,entangled photon

Entangled photon sources using semiconductor quantum dots (QDs) have been investigated intensively for the application to quantum devices and studies of fundamental physics in QDs. In our group, we fabricated highly symmetric QDs using droplet epitaxy and demonstrated the high quality entagled photon emission from the QDs. For the next step, it is highly desired to realize electrically-driven entangled photon emission. In this study, we investigate the n- and p-type GaAs and AlGaAs layers growth conditions using silicon doping and observed clear electroluminescence from the highly symmetric QD in LED structure.