The 76th JSAP Autumn Meeting, 2015

Presentation information

Symposium

Symposium » New functional GaN-based laser diodes and the applications

[14p-CE-5~11] New functional GaN-based laser diodes and the applications

Mon. Sep 14, 2015 2:15 PM - 5:45 PM CE (Century Hall)

座長:片山 竜二(東北大),宮嶋 孝夫(名城大)

5:15 PM - 5:45 PM

[14p-CE-11] Pulsed operations of nitride-based VCSELs with AlInN distributed Bragg reflectors

〇Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1, Isamu Akasaki1,2 (1.Meijo Univ., 2.Akasaki Res. Cen.)

Keywords:laser,VCSEL,DBR

In this presentation, we provide an introduction that recently semiconductor lasers have attracted much attention as light sources in illumination and display applications. We then review a current status of a nitride-based vertical cavity surface emitting laser which is one of the most suitable semiconductor lasers, and describe our approaches to improve the device performances.