[14p-PA10-1~16] 6.4 Thin films and New materials

△ [14p-PA10-3] Effect of excimer laser irradiation condition on solid phase crystallization, structure and optical property of Ga₂O₃ thin films

〇hiroki uchida¹, Daishi Shiojiri¹, Daiji Fukuda¹, Nobuo Tsuchimine², Koji Koyama³, Satoru Kaneko^4,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Inst. of Tech., 2.TOSHIMA Manu., 3.Namiki Precision Jewel, 4.Kanagawa Ind. Tech. Center)

Keywords:gallium oxide,laser annealing,wide-gap semiconductor