[14p-PA13-1~21] 6.3 Oxide electronics

[14p-PA13-10] Electrical and Structural Properties of TiO_2-δ Thin Film Prepared by Sputtering Using Oxygen Radical

Kinya Kawamura¹, Naoya Suzuki¹, Takashi Tsuchiya¹, Masaki Kobayashi², Hiroshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. of Sci., 2.KEK)

Keywords:Oxide semiconductor,TiO2,Oxygen radical

We have prepared the TiO_2-δ thin film by Rf magnetron sputtering using oxygen radical and characterized its structural and electrical properties. The orientation, carrier density and mobility change by amount of oxygen radical. The Pt/TiO_2-δ/Pt with Cross-point structure exhibited good I-V characteristic.