[14p-PA13-1~21] 6.3 Oxide electronics

[14p-PA13-9] Electrical and Structural Properties of VO₂ Thin Film with Mixed Valence State

Takaaki Suetsugu¹, 〇Tohru Higuchi¹, Tsuchiya Takashi¹, Masaki Kobayashi², Hiroshi Kumigashira² (1.Tokyo Univ. Sci., 2.PF, KEK)

Keywords:VO2,metal-insulator transition

we have prepared the VO₂ thin films on Al₂O₃ substrates by RF magnetron sputtering using oxygen radical and characterized their structural and electrical properties. The lattice constant, the amount of oxygen vacancies and V valence state of VO₂ thin films depend on film thickness. These changes are affected by behavior of metal-insulator transition of VO₂ thin films.