[14p-PA14-1~4] 6.5 Surface Physics, Vacuum

[14p-PA14-4] Temperature Dependence of Initial GaSb Growth Process on Al/Si(111)-\sqrt{3}×\sqrt{3} Reconstructed Surface

〇Norihiro Ogata¹, Ryuto Machida¹, Tatsuya Ishii¹, Sachie Fujikawa¹, Shinsuke Hara², Katsumi Irokawa¹, Hirofumi Miki¹, Akira Kawazu³, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.NICT, 3.Tokyo Denki Univ.)

Keywords:Si(111),GaSb,Scanning Tunneling Microscopy