[14p-PA4-1~9] 3.15 シリコンフォトニクス

▲ [14p-PA4-9] High quality factor Ta₂O₅ based micro-ring resonator

Chung-Lun Wu¹, Ting-Wei Liao¹, Yi-Jen Chiu¹, Yuan-Yao Lin¹, Ann-Kuo Chu¹, 〇Chao-Kuei Lee¹ (1.Department of Photonics, National Sun Yat-sen University)

キーワード：Ta2O5,Micro-ring resonator

Low absorption and crack-free Ta₂O₅ thin film has been demonstrated by using the reactive sputtering and post-annealing process. The optimized annealing receipt is set as 650^oC for 3 hours in the oxygen environment to compensate the oxygen deficiencies of the as-grown Ta₂O₅ film. By using the E-beam lithography and RIE etching process, the Ta₂O₅ based micro-ring resonator with diameter of 300 mm is demonstrated. The geometrical dimension of the Ta₂O₅ waveguide is set as 700´400 nm². The gap between the bus waveguide and ring cavity is designed as 1100 nm. By fitting the transmission spectrum of Ta₂O₅ based micro-ring resonator, the coupling efficiency and loss coefficient are 1.2 % and 1.5 cm^-1, respectively. The Q factor and unload Q of 44220 and 51585 in the Ta₂O₅ micro-ring resonator is demonstrated.