[14p-PB12-1~23] 15.4 III-V-group nitride crystals

[14p-PB12-2] Investigation of device structure in UV hetero-field-effect-transistor-type photosensors

〇Yuma Yamamoto¹, Akira Yoshikawa^1,3, Toshiki Okumura¹, Toshiki Kusafuka¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, 3.Asahi-Kasei Corporation)

Keywords:sensor