The 76th JSAP Autumn Meeting, 2015

Presentation information

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

Mon. Sep 14, 2015 1:30 PM - 3:30 PM PB2 (Shirotori Hall)

1:30 PM - 3:30 PM

[14p-PB2-14] Temperature dependence of current-voltage characteristics for Ni/low-Mg-doped p-GaN Schottky diodes

〇Toshichika Aoki1, Kenji Shiojima1 (1.Univ. of Fukui)

Keywords:p-GaN,Schottky contact,I-V-T