The 76th JSAP Autumn Meeting, 2015

Presentation information

Print

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

Mon. Sep 14, 2015 1:30 PM - 3:30 PM PB2 (Shirotori Hall)

1:30 PM - 3:30 PM

[14p-PB2-20] Temperature dependence on frequency dispersion of drain conductance in AlGaN/GaN HEMT

〇Tomotaka Narita1, Yuki Katayama1, Keiichi Tamesue1, Akio Wakejima1, Takashi Egawa1 (1.Nagoya Inst. of Tech.)

Keywords:GaN,HEMT,Frequency dispersion