[14p-PB2-1~21] 13.8 化合物及びパワー電子デバイス・プロセス技術

▲ [14p-PB2-3] 494-GHz-f_T high-speed InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well

〇AMINE ELMOUTAOUAKIL¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)

キーワード：InAs,HEMT,III-V

InP-based high-electron-mobility transistors (HEMTs) with InAs quantum well exhibit record high-speed performances because of their high electron mobility and saturation velocity. In this work, we report on an InP-based HEMT with an InAs/In_0.8Ga_0.2As quantum well in the channel and a single Si δ-doping, which provide a high-speed operation for short-gate-length (L_G) HEMTs.