The 76th JSAP Autumn Meeting, 2015

Presentation information

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

Mon. Sep 14, 2015 1:30 PM - 3:30 PM PB2 (Shirotori Hall)

1:30 PM - 3:30 PM

[14p-PB2-4] Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs

〇Akira Endoh1,2, Issei Watanabe1, Akifumi Kasamatsu1, Tsuyoshi Takahashi2, Shoichi Shiba2, Yasuhiro Nakasha2, Taisuke Iwai2, Takashi Mimura1,2 (1.National Inst. of Info. and Com. Tech., 2.Fujitsu Laboratories Ltd.)

Keywords:HEMT,Cryogenic DC and RF characteristics