[14p-PB5-1~15] 12.2 Characterization and Materials Physics

[14p-PB5-3] Characterization of traps in OTFT by the combination of gate-bias dependent field-effect mobility and current DLTS measurements

〇Tomoki Yoshida¹, Takashi Ota¹, Hideyuki Akanuma¹, Yutaka Tokuda¹, Kenji Nakamura², Tetsuya Katou², Masayuki Katayama² (1.Aichi Inst. of Tech., 2.DENSO CORP.)

Keywords:DLTS,Organic TFT

We characterize traps in the wider energy range near the band edge to 0.7 eV for organic thin film transistors (OTFTs) by a combination of gate-bias dependent field-effect mobility measurements in the temperature range from 100 to 300 K, and temperature-scan and 300 K isothermal current DLTS for MOS structures with the source electrode shorted to the drain electrode. Bottom gate top contact OTFTs were used consisting of C10-DNTT as the organic semiconductor. Trap distribution in the energy range from 0.05 to 0.70 eV was well fitted to the sum of two exponential functions.