[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-7] Investigation on Al₂O₃,Al₆Si₂O₁₃ gate insulator for
4H-SiC MISFETs in harsh environment

〇Hikaru Akase¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Milantha de Silva¹, Hirofumi Nagatuma¹, Takamaro Kikkawa¹, Shin-ichiro Kuroki¹ (1.Hiroshima Uni.RNBS, 2.Phenitec)

Keywords:SiC,Al2O3