[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-1] Improvement of Crystallinity of SiC Thin Films on AlN/Si(110) Substrates

〇(M1)Shunki Narita¹, Kazuki Meguro¹, Hideki Nakazawa¹ (1.Hirosaki Univ.)

Keywords:silicon carbide

We have successfully grown 3C-SiC(111) films on AlN/Si(110) substrates by pulsed laser deposition (PLD) using a SiC target, and investigated the crystallinity and surface morphology of the grown films. Wurtzite AlN(0001) layers were grown on Si(110) at 750°C by PLD using a AlN target and nitrogen gas at various laser powers. We found that the AlN layer grown at 200 mJ/pulse had the best crystallinity and surface flatness without rotation domains. We formed a SiC interfacial buffer layer on the AlN layer grown at 200 mJ/pulse by low-pressure chemical vapor deposition using monomethylsilane (CH3SiH3), and grew a SiC film on the low-temperature buffer layer. It was found that the formation of the AlN intermediate layer was very effective in preventing the Si outdiffusion during the SiC growth. The qualified SiC film was grown epitaxially on the buffer layer and exhibited a 3C-SiC(111)3x3 reconstructed surface.