The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 15, 2015 9:00 AM - 12:00 PM 1A (131+132)

座長:原田 俊太(名大)

9:15 AM - 9:30 AM

[15a-1A-2] Mechanism of Crystallographically Rotated Growth of 3C-SiC(111) Thin Film on Si(110)

〇tai yokoyama1, Sergey Filimonov2, Hiroyuki Nagasawa1, Hirokazu Fukidome1, Maki Suemitsu1 (1.Tohoku Univ. RIEC, 2.Tomsk State Univ.)

Keywords:SiC,heteroepitaxy,thin film