[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [15a-1A-4] Formation mechanism of 1-unit-cell-height steps on macro terraces of macro-step-bunched SiC surface by high-temperature hydrogen gas etching

〇Kazuto Hirai¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

Keywords:SiC,macro-step,gas etching