[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-5] Amorphous SiC Film Deposition at Room Temperature under Soft Plasma

Kohei Shioda¹, Maria Tanaka¹, Asumi Hirooka¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Keywords:Room temperature process,SiC film,Amorphous

In our previous study, the SiC thin film could be formed using monomethylsilane (MMS) gas after the surface activation using the soft plasma. This study shows that the MMS was introduced into the argon soft plasma to produce the SiC film thicker than 200 nm without fluorine contamination.