[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-6] Repetition of SiC Epitaxial Reactor Cleaning Using Chlorine Trifluoride Gas

〇kohei shioda¹, Kosuke Mizuno¹, Hitomi Matsuda¹, Hitoshi Habuka¹, Yuuki Ishida², Toshiyuki Ohno³ (1.Yokohama Nat.Univ, 2.AIST, 3.FUPET)

Keywords:SiC Epitaxy,Reactor cleaning,ClF3

For improving the SiC epitaxial wafer production process, the combination of the SiC film growth and the cleaning technique using ClF3 gas was repeated three times. By adjusting the cleaning temperature and by choosing the coating materials, the cleaning could be succeeded without causing an obvious damage to the susceptor.