[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-8] Etching rate and surface morphology of C-face 4H-SiC epitaxial film using chlorine trifluoride gas

〇Asumi Hirooka¹, Yusuke Fukumoto¹, Hitoshi Habuka¹, Tomohisa Kato² (1.Yokohama Nat. Univ., 2.AIST)

Keywords:SiC epitaxial layer,ClF3,Etching

The C-face 4H silicon carbide epitaxial film was etched using chlorine trifluoride (ClF3) gas at 100 % and at 400-750 ^oC. The etching rate was 0.8 - 10μm/min, which was similar to that of the C-face 4H-SiC single crystalline substrate. After the etching, the epitaxial film surface was still smooth, while the single crystalline substrate surface became rough.