[15a-1C-1~7] 13.5 Semiconductor devices and related technologies

△ [15a-1C-3] Characterization of a multiple quantum dot device based on Si-MOS structure

〇TAKUMU HONDA¹, JUN YONEDA², KENTA TAKEDA², TETSUO KODERA^4,5, SEIGO TARUCHA^2,3,5, SHUNRI ODA¹ (1.QNERC-Tokyo Tech., 2.RIKEN, 3.The Univ. of Tokyo, 4.Tokyo Tech, 5.NanoQuine-The Univ. of Tokyo)

Keywords:quantum dot,electron spin,silicon