[15a-2E-1~12] 4.7 Terahertz Photonics

▲ [15a-2E-11] THz detection by GeTe/Sb2Te3 interfacial phase change materials

〇(PC)KOTARO Makino^1,2, Shota Kuromiya³, Keisuke Takano³, Makoto Nakajima³, Hitoshi Iida^2,4, Moto Kinoshita^2,4, Yuta Saito^1,2, Junji Tominaga^1,2, Takashi Nakano^1,2 (1.NRI, AIST, 2.JST-CREST, 3.ILE, Osaka Univ., 4.NMIJ, AIST)

キーワード：THz detection,Topological insulator,Phase change material

Topological insulators have metallic surface states which is capable of THz absorption. Here we report the THz wave detection utilizing a GeTe/Sb₂Te₃ multi-layered interfacial phase change memory material which has a topological nature. The THz transmission spectroscopy revealed that the multi-layered structure enhances the photo-absorption coefficient in the THz frequency range. Photoconductivity measurement was carried out for THz pulses and significant photo-induced decrease in the resistance of the sample was observed.