[15a-2H-1~10] 6.3 Oxide electronics

[15a-2H-7] Impacts of metal electrode on the defect structure and resistive switching characteristics of amorphous SrTiO₃

〇Atsushi Tsurumaki-Fukuchi¹, Ryosuke Nakagawa¹, Reon Katsumura¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

Keywords:resistive switching memory,ReRAM,amorphous oxide

For the development of advanced resistive switching memory consisting of an amorphous metal oxide, which allows room-temperature fabrication and has structural flexibility, we have explored electric-field-induced resistive switching effects in amorphous oxides and investigated the impacts of device structures on the characteristics. In this study, we fabricated capacitor-like devices consisting of amorphous SrTiO₃ (a-STO) which was grown at room temperature and in pure argon environment. When Pt is used as the electrode for both the top and bottom interfaces, no restive switching behavior was observed in the current–voltage characteristics in a range of ±30 V. On the other hand, a clear resistive switching emerged in the devices by inserting a 10 nm-thick Ti layer at one of the interfaces. The emergence of the resistive switching is attributable to the increase in oxygen-defect concentration in a-STO caused by interfacial reactions with Ti layer and resulting easier formation of conductive filaments. From these results, strong impacts of metal electrodes on the defect structure and resistive switching characteristics were shown for a-STO.