The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

[15a-2J-1~8] 6.4 Thin films and New materials

Tue. Sep 15, 2015 9:00 AM - 11:45 AM 2J (223)

座長:遠藤 和弘 (金沢工大)

11:30 AM - 11:45 AM

[15a-2J-8] Physical properties of novel Cu1-xCdxS2 thin films grown by chemical bath deposition method for low cost solar cell

〇NirmalKumar Velu1,2, Gopalakrishnan R2, Suriakarthick R2, Yaushiro Hayakawa1 (1.RIE Shizuoka Univ, 2.Anna University Univ.)

Keywords:Cu1-xCdxS2,thin films,solar cell

Thin films of Cu1-xCdxS2 were prepared with various compositions by chemical bath deposition method in single step at room temperature. The Cu1-xCdxS2 thin films exhibited two different type conductivities, p and n-type owing to composition of cations. Physical properties of Cu1-xCdxS2 thin films can be tuned between CuxS and CdS to get desired properties. Cu1-xCdxS2 thin films with Cu and Cd rich compositions had wider absorption region, p and n-type conductivities, higher carrier concentration and tuneable band gap between Cu2S and CdS. Therefore this material is suitable for photovoltaic applications and it can perform the role of both p-type and n-type semiconductor based on their composition.