2015年 第76回応用物理学会秋季学術講演会

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6 薄膜・表面 » 6.4 薄膜新材料

[15a-2J-1~8] 6.4 薄膜新材料

2015年9月15日(火) 09:00 〜 11:45 2J (223)

座長:遠藤 和弘 (金沢工大)

11:30 〜 11:45

[15a-2J-8] Physical properties of novel Cu1-xCdxS2 thin films grown by chemical bath deposition method for low cost solar cell

〇NirmalKumar Velu1,2, Gopalakrishnan R2, Suriakarthick R2, Yaushiro Hayakawa1 (1.RIE Shizuoka Univ, 2.Anna University Univ.)

キーワード:Cu1-xCdxS2,thin films,solar cell

Thin films of Cu1-xCdxS2 were prepared with various compositions by chemical bath deposition method in single step at room temperature. The Cu1-xCdxS2 thin films exhibited two different type conductivities, p and n-type owing to composition of cations. Physical properties of Cu1-xCdxS2 thin films can be tuned between CuxS and CdS to get desired properties. Cu1-xCdxS2 thin films with Cu and Cd rich compositions had wider absorption region, p and n-type conductivities, higher carrier concentration and tuneable band gap between Cu2S and CdS. Therefore this material is suitable for photovoltaic applications and it can perform the role of both p-type and n-type semiconductor based on their composition.