[15a-2S-1~11] 16.3 Bulk, thin-film and other silicon-based solar cells

[15a-2S-6] Role of growth orientation in suppressing dislocation generation during single crystal

〇BING GAO¹, Satoshi Nakano¹, Hirofumi Harada¹, Yoshiji Miyamura¹, Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

Keywords:dilocation,silicon

The arguments about the effect of growth orientation on the generation of dislocations are still not fully agreed. To accurately determine the effect of growth orientation on the generation of dislocations, we incorporated the anisotropic effect of crystal lattice and the effect of growth orientations into our previously proposed advanced 3D Alexander-Haasen model, which considered 12 slip directions, 144 cross slips, immobilization of mobile dislocations, jog formation between different slip systems, and internal stress due to short-range interactions. This solver can accurately track the dislocation generation at different growth orientations. Our results clearly confirmed that the [110] growth orientation results in the lowest dislocation density (almost zero), and the [111] growth orientation can reduce the dislocation density by almost 50% compared to the [001] or [112] growth orientations. The dislocation density in the [112] growth orientation is the highest. Therefore, the [110] growth orientation is the most effective orientation in suppressing dislocation generation.