[15a-2S-1~11] 16.3 シリコン系太陽電池

[15a-2S-6] シリコン単結晶成長における転位密度低減に対する結晶成長方位の役割

〇高 冰¹、中野 智¹、原田 博文¹、宮村 佳児¹、柿本 浩一¹ (1.九大応力研)

キーワード：転位密度、シリコン

The arguments about the effect of growth orientation on the generation of dislocations are still not fully agreed. To accurately determine the effect of growth orientation on the generation of dislocations, we incorporated the anisotropic effect of crystal lattice and the effect of growth orientations into our previously proposed advanced 3D Alexander-Haasen model, which considered 12 slip directions, 144 cross slips, immobilization of mobile dislocations, jog formation between different slip systems, and internal stress due to short-range interactions. This solver can accurately track the dislocation generation at different growth orientations. Our results clearly confirmed that the [110] growth orientation results in the lowest dislocation density (almost zero), and the [111] growth orientation can reduce the dislocation density by almost 50% compared to the [001] or [112] growth orientations. The dislocation density in the [112] growth orientation is the highest. Therefore, the [110] growth orientation is the most effective orientation in suppressing dislocation generation.