The 76th JSAP Autumn Meeting, 2015

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17 Nanocarbon Technology » 17.4 Device applications

[15a-2T-1~12] 17.4 Device applications

Tue. Sep 15, 2015 9:00 AM - 12:15 PM 2T (232)

座長:神田 晶申(筑波大)

9:00 AM - 9:15 AM

[15a-2T-1] Fabrication of Graphene FETs by Cat-CVD-Synthesized SiNx Film on a SiC Substrate

〇Yasuhide Ohno1, Masao Nagase1, Kazuhiko Matsumoto2 (1.Tokushima Univ., 2.ISIR, Osaka Univ.)

Keywords:graphene,field-effect transistor