The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.4 Device applications

[15a-2T-1~12] 17.4 Device applications

Tue. Sep 15, 2015 9:00 AM - 12:15 PM 2T (232)

座長:神田 晶申(筑波大)

11:45 AM - 12:00 PM

[15a-2T-11] Large-Scale Array of Nanocrystalline Graphene Nanoelectromechanical Switches

〇(PC)Jian SUN1, Marek Schmidt1, Manoharan Muruganathan1, Hiroshi Mizuta1,2 (1.JAIST, 2.Univ. of Southampton)

Keywords:nanoelectromechanical switch,nanocrystalline graphene,PECVD transfer-free graphene

Graphene, with its low thickness and ultra-high Young’s modulus of ~ 1 TPa, is a promising candidate for future nanoelectromechanical (NEM) switches. However, it has yet to outperform conventional materials regarding commercial scale integration. Chemical vapor deposition (CVD) of graphene on metal catalysts, along with its transfer techniques, offers the prospect to establish large-scale graphene electronics. Nevertheless, directly grown graphene on insulating substrates is still desirable. In this work, we demonstrate a large-scale array of NEM switches fabricated from nanocrystalline graphene (NCG) that was deposited directly onto an insulator via catalyst-free plasma enhanced CVD. Here we use regular thin film process techniques, with no transfer required, and achieve high performance, i.e. low pull-in voltage of 8.5 V, reversible operations, minimal leakage current of ~1 pA, and high on/off ratio of ~105.