[15a-2T-1~12] 17.4 Device applications

[15a-2T-7] Tight binding analysis of ambipolar characteristics for graphene tunnel FETs

〇(M2)Shunei Suzuki¹, Manoharan Muruganathan¹, Shunri Oda², Hiroshi Mizuta^1,3 (1.JAIST, 2.Tokyo Tech, 3.Univ. of Southampton)

Keywords:Graphene tunnel FETs,First principle analysis,Ambipolar characteristics