[15a-3A-1~11] 10.2 Spin torque, spin current, circuits, and measurement technologies

▲ [15a-3A-10] All-oxide spin Seebeck devices using RuO₂ films depending on annealing temperature

〇Akihiro Kirihara^1,2, Masahiko Ishida^1,2, Kazuki Ihara^1,2, Yuma Iwasaki¹, Hiroko Someya^1,2, Ryota Yuge¹, Ken-ichi Uchida^3,4, Eiji Saitoh^2,3,5,6, Shinichi Yorozu^1,2 (1.NEC, 2.JST-ERATO, 3.IMR, Tohoku Univ., 4.JST-PRESTO, 5.AIMR, Tohoku Univ., 6.JAEA)

Keywords:the spin Seebeck effect,Spin Caloritronics

Thermoelectric devices using the spin Seebeck effect (SSE) are expected to be used for applications such as heat-flow sensors. Though Pt has been typically employed as spin-Hall materials for SSE devices, it should be replaced by other materials having lager spin-Hall effect and lower material cost. In this talk, we show all-oxide SSE devices using RuO₂, and its dependence on annealing temperature.