[15a-4C-1~13] 13.8 Compound and power electron devices and process technology

[15a-4C-13] GaN-MOSFET characteristics with SiO₂ formed by plasma CVD

〇Katsunori Ueno¹, Shinya Takashima¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric Co., 2.Univ. of Yamanashi)

Keywords:GaN,MOSFET,SiO2