[15a-4C-1~13] 13.8 Compound and power electron devices and process technology

[15a-4C-2] Dependence of pattern size on reduction of contact resistance of ohmic contacts with uneven AlGaN layers for AlGaN/GaN high electron mobility transistors

〇TOMOHIRO SHIMODA¹, Yusuke Takei¹, Kazuo Tsutsui¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (1.Tokyo Inst. Technol., 2.Toshiba)

Keywords:AlGaN,uneven structure,ohmic contact