[15a-4C-1~13] 13.8 Compound and power electron devices and process technology

[15a-4C-4] Mapping of n-GaN Schottky contacts degraded by voltage stress

〇Shingo Murase¹, Hiroshi Ohta², Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

Keywords:n-GaN,scanning internal photoemission microscopy