[15a-4C-1~13] 13.8 Compound and power electron devices and process technology

△ [15a-4C-6] Photocurrent of Homoepitaxial n-type GaN Schottky-barrier Diode

〇Takuya Maeda¹, Masaya Okada², Masaki Ueno², Yoshiyuki Yamamoto², Masahiro Horita³, Jun Suda³ (1.Kyoto Univ., 2.Sumitomo Electric Industries,Ltd., 3.Dept. of Electron. Sci&Eng.,Kyoto Univ.)

Keywords:gallium nitride,photocurrent,Schottky