09:30 〜 11:30
▲ [15a-PB2-7] Efficient Organic-Inorganic Hybrid Hole Injection Layer for Organic Light-Emitting Diodes by Aqueous Solution Doping
キーワード：Hole Injection Layer,Organic-Inorganic Hybrid,Organic Light-Emitting Diodes
An aqueous solution-processed hole injection layer, MoO3 doped copper phthalocyanine-
3,4’,4’’,4’’’-tetra-sulfonated acid tetra sodium salt (TS-CuPc), in organic light-emitting diodes (OLEDs) via an environmentally-friendly and easy fabrication process. The generation of a charge transfer complex in TS-CuPc:MoO3 composite films is confirmed by absorption spectra and X-ray photoemission spectroscopy (XPS) measurements. The TS-CuPc:MoO3 interfacial layer based
device exhibited lower driving voltage and higher efficiency than the pristine TS-CuPc based one. Enhanced hole injection in OLEDs is attributed to the decreased hole barrier at the ITO side, which is in agreement with the Schottky thermal emission evaluation. The efficient modification of ITO by TS-CuPc:MoO3 is further confirmed by ultraviolet photoemission spectroscopy (UPS) measurements. Specifically, over 65% enhancement in power efficiency is achieved compared to the device without any interfacial modification, the improved performance of MoO3:TS-CuPc based devices is attributed to the reduced hole-injecting barrier height at the anode/doped HIL interface, and the reduced bulk resistivity in the doped HIL. What’s more, the crystallization of TS-CuPc film could be alleviated by doping with MoO3. Meanwhile, MoO3 diffusion can be suppressed, which is beneficial to the device performance to some extent.
3,4’,4’’,4’’’-tetra-sulfonated acid tetra sodium salt (TS-CuPc), in organic light-emitting diodes (OLEDs) via an environmentally-friendly and easy fabrication process. The generation of a charge transfer complex in TS-CuPc:MoO3 composite films is confirmed by absorption spectra and X-ray photoemission spectroscopy (XPS) measurements. The TS-CuPc:MoO3 interfacial layer based
device exhibited lower driving voltage and higher efficiency than the pristine TS-CuPc based one. Enhanced hole injection in OLEDs is attributed to the decreased hole barrier at the ITO side, which is in agreement with the Schottky thermal emission evaluation. The efficient modification of ITO by TS-CuPc:MoO3 is further confirmed by ultraviolet photoemission spectroscopy (UPS) measurements. Specifically, over 65% enhancement in power efficiency is achieved compared to the device without any interfacial modification, the improved performance of MoO3:TS-CuPc based devices is attributed to the reduced hole-injecting barrier height at the anode/doped HIL interface, and the reduced bulk resistivity in the doped HIL. What’s more, the crystallization of TS-CuPc film could be alleviated by doping with MoO3. Meanwhile, MoO3 diffusion can be suppressed, which is beneficial to the device performance to some extent.