[15a-PB3-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

[15a-PB3-11] Quantum transport simulation for electrical conduction characteristics of the strained graphene p-n junction

〇(M1)Keisuke Ichihara¹, Kenji Sasaoka¹, Matsuto Ogawa¹, Satofumi Souma¹ (1.Kobe Univ.)

Keywords:strained graphene,nonequilibrium Green's function,p-n junction

The purpose of this research is to reveal electrical conduction characteristics of the strained graphene p-n junction. We show the analysis method using nonequilibrium Green's function that is suitable for more complex strain and potential. Then we report the analysis result for the purpose of revealing the basical characteristics of the strained/nonstrained graphene p-n junction. We study the possibility of obtaining the rectification property from this structure as well.