[15a-PB5-1~4] 13.6 Semiconductor English Session

▲ [15a-PB5-2] Si(100) crystal grains formation by Double-line Beam Continuous-Wave Laser Crystallization with Overlapping

〇(D)Thuy Nguyen¹, Shin-Ichiro Kuroki¹ (1.Research Institute for Nanodevice and Bio Systems, Hiroshima Univ.)

Keywords:Semiconductor,TFT,crystalization

One-Dimentionally large Si grains were uniformly formed by double-line beam continuous-wave laser lateral crystallization with overlapping ratio of 80%. In addition, Si grains with the size of around 100x1 um2 were highly oriented at the plane of (100) at laser power of 6 W and scan speed of 0.8 cm/s. As the scan speed decreases , area of (100) became smaller.