09:30 〜 11:30
▲ [15a-PB5-2] Si(100) crystal grains formation by Double-line Beam Continuous-Wave Laser Crystallization with Overlapping
キーワード:Semiconductor,TFT,crystalization
One-Dimentionally large Si grains were uniformly formed by double-line beam continuous-wave laser lateral crystallization with overlapping ratio of 80%. In addition, Si grains with the size of around 100x1 um2 were highly oriented at the plane of (100) at laser power of 6 W and scan speed of 0.8 cm/s. As the scan speed decreases , area of (100) became smaller.