The 76th JSAP Autumn Meeting, 2015

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Joint Session K » 21.1 Joint Session K

[15p-1B-1~18] 21.1 Joint Session K

Tue. Sep 15, 2015 1:15 PM - 6:00 PM 1B (133+134)

座長:浦岡 行治(奈良先端大),神谷 利夫(東工大)

1:30 PM - 1:45 PM

△ [15p-1B-2] Epitaxial structure and capacitance-voltage characteristics of γ-Al2O3 films grown on β-Ga2O3 (010) substrate

〇Mai Hattori1, Takayoshi Oshima1, Ryo Wakabayashi1, Kohei Sasaki2, Takekazu Masui2, Akito Kuramata2, Shigenobu Yamakoshi2, Kohei Yoshimatsu1, Akira Ohtomo1,3 (1.Tokyo Tech., 2.Tamura Corporation, 3.MCES)

Keywords:Gallium oxide