[15p-1C-1~18] 13.5 Semiconductor devices and related technologies

[15p-1C-1] Substrate Bias Dependence of RTN Amplitude Statistics in FD-SOTB nMOSFET

〇Kyungmin Jang¹, Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS The Univ. of Tokyo)

Keywords:RTN,FDSOI,FD-SOTB nMOSFET

Substrate bias dependence of statistics of random telegraph noise (RTN) amplitude has been investigated in fully depleted SOTB MOSFETs. SOTB has not only the gate oxide interface but also the back SOI/BOX interface. By the substrate bias dependence measurements of the RTN amplitude, the effect of the back SOI/BOX interface on RTN amplitude has not been observed.