The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices and related technologies

[15p-1C-1~18] 13.5 Semiconductor devices and related technologies

Tue. Sep 15, 2015 1:15 PM - 6:00 PM 1C (135)

座長:齋藤 真澄(東芝),入沢 寿史(産総研)

1:15 PM - 1:30 PM

[15p-1C-1] Substrate Bias Dependence of RTN Amplitude Statistics in FD-SOTB nMOSFET

〇Kyungmin Jang1, Tomoko Mizutani1, Kiyoshi Takeuchi1, Takuya Saraya1, Masaharu Kobayashi1, Toshiro Hiramoto1 (1.IIS The Univ. of Tokyo)

Keywords:RTN,FDSOI,FD-SOTB nMOSFET

Substrate bias dependence of statistics of random telegraph noise (RTN) amplitude has been investigated in fully depleted SOTB MOSFETs. SOTB has not only the gate oxide interface but also the back SOI/BOX interface. By the substrate bias dependence measurements of the RTN amplitude, the effect of the back SOI/BOX interface on RTN amplitude has not been observed.