[15p-1C-1~18] 13.5 Semiconductor devices and related technologies

[15p-1C-10] Mobility on Junctionless Nanowire FETs

〇Akiko Ueda¹, Mathieu Luisier², Nobuyuki Sano¹ (1.Univ. Tsukuba, 2.ETH)

Keywords:Si nanowire,Junctionless transistor,NEGF method

We examine the low field mobility in the presence of the ionized impurity scattering and phonon scattering for n-type junctionless nanowire FETs. The current is calculated by the nonequilibrium Green function method based on the sp³d⁵s* tight-binding model. The potential of an ionized impurity is determined by solving the Poisson equation. We find that the mobility becomes larger with the increase of the electron concentration inside the channel by applying the gate voltage. Also, the mobility is enhanced for higher doping concentration when the electrons pass through the channel region with resonant tunneling.