[15p-1C-1~18] 13.5 Semiconductor devices and related technologies

[15p-1C-11] An Application of Laser Annealing Process in Low-Voltage Power MOSFETs

〇YI CHEN¹, Tatsuya Okada¹, Takashi NOGUCHI¹, Fulvio MAZZAMUTO², Karim HUET² (1.University of the Ryukyus, 2.SCREEN Semiconductor Solutions)

Keywords:laser annealing,shallow junction,blocking characteristics

An application of laser annealing process, which is used to form the P-type Base-Junction (P-Base Junction) for high-performance low-voltage power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), is proposed. An equivalent shallow-junction structure for P-Base-Junction with uniform impurity distribution is achieved by adopting ELA (Excimer Laser Annealing). Lower sheet resistance and higher impurity activation for the shallow junction have been achieved by the laser annealing of melted phase than by conventional RTA (Rapid Thermal Annealing) of solid phase. The property (reverse-blocking characteristics) of the shallow junction formed by the laser annealing technology is also examined.