[15p-1C-1~18] 13.5 Semiconductor devices and related technologies

[15p-1C-16] Gate Modulation of VO₂ Channel Transistors as a Function of Channel Thickness

〇Takeaki Yajima^1,2, Tomonori Nishimura^1,2, Akira Toriumi^1,2 (1.The Univ. of Tokyo, 2.JST-CREST)

Keywords:Mott transistor,vanadium oxide

Recently we have succeeded in the operation of the solid-state VO₂-channel transistor by exploiting a very high-permittivity TiO₂ gate dielectrics. In this study, we report a transistor operation unique to the metal-insulator transition device: the magnitude of the gate modulation is a strong function of the channel thickness.