[15p-1C-1~18] 13.5 Semiconductor devices and related technologies

[15p-1C-7] Threshold Voltage and Current Variability Due to Quantum Confinement Effect in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm

〇Tomoko Mizutani¹, Yuma Tanahashi¹, Ryota Suzuki¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

Keywords:Nanowire FET,Variability,Quantum Confinement Effect

The threshold voltage and on-current variability of extremely narrow silicon nanowire channel FETs is intensively measured and statistically analyzed. It is found that the Pelgrom coefficient of 7nm-wide nanowire FETs is much smaller than that of FDSOI FETs, while the Pelgrom coefficient rapidly increases as the nanowire width decreases down to 2nm. The increase in variability is ascribed to threshold voltage fluctuations due to the quantum confinement effect induced by nanowire width fluctuations.