The 76th JSAP Autumn Meeting, 2015

Presentation information

Symposium

Symposium » Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-

[15p-1D-1~11] Materials science of singularity in nitride semiconductors -Control and physics on surface and interface-

Tue. Sep 15, 2015 1:15 PM - 5:45 PM 1D (141+142)

座長:三宅 秀人(三重大),片山 竜二(東北大),熊谷 義直(農工大)

5:15 PM - 5:45 PM

[15p-1D-11] Control of interface on epitaxy of nitride semiconductors on sapphire substrates

〇Hideto Miyake1, Kazumasa Hiramatsu2 (1.Gr.Sch.RIS Mie Univ., 2.Gr.Sch.Eng Mie Univ.)

Keywords:AlN,epitaxial lateral overgrowth,annealing at high temperature

Facet control during growth of nitride semiconductors is a promising technique to obtain a high-quality epitaxial GaN layer with low threading dislocation (TD) density. We reported facet controlled epitaxial lateral overgrowth (FACELO) technique of GaN was a useful technique to reduce TD density and achieved TD density of the order of 108 cm-2 .FWHMs of the XRCs of the AlN buffer layers were significantly decreased by annealing at 1700 oC in CO-N2 ambent, and are 15arcsec and 154 arcsec for (0002) and (10-12), respectively.